Model-based Simulation Methodology for EMI/EMC

Electromagnetic Interference (EMI) and Electromagnetic Compatibility (EMC) contribute to a significant percentage of compliance failures in the hardware verification stage. This leads to delay-to-market or cancelled projects. We developed a model-based system-level simulation capability for Bulk Current Injection (BCI) [1] and Radiated Emissions (RE) [2] for early prediction of possible failures. The methodology consists of fast 3D full-wave Electromagnetic simulation using matrix-compression in conjunction with data-based models for apparatus like injection-clamp and Integrated Circuits (ICs) to address the complexity of system-level simulation.

References:

B. P. Nayak, S. Ramesh, S. Rajeev, A. Devi, T. Tsuda and D. Gope, “Model-Based System-Level EMI/EMC Simulation for BCI Pass-Fail Prediction,” in IEEE Letters on Electromagnetic Compatibility Practice and Applications, vol. 2, no. 2, pp. 28-33, June 2020, doi: 10.1109/LEMCPA.2020.2979227.

H. Muniganti, B. Nayak and D. Gope, “Diagnosis of Radiating Elements for CISPR 25 RE Test Setup Using Huygens Box Method,” in IEEE Letters on Electromagnetic Compatibility Practice and Applications, vol. 2, no. 2, pp. 40-45, June 2020, doi: 10.1109/LEMCPA.2020.2985342.

Website: https://ece.iisc.ac.in/~dipanjan/

Faculty: Dipanjan Gope, ECE
Click image to view enlarged version
Bulk Current Injection laboratory test for a hardware comprised of a PNP transistor (2SA1576). An IC-model for the transistor is developed. The hardware-in-laboratory environment is simulated and the simulated noise-voltage exceeding the IC-model threshold-values is able to predict measurement failures [1].
Bulk Current Injection laboratory test for a hardware comprised of a PNP transistor (2SA1576). An IC-model for the transistor is developed. The hardware-in-laboratory environment is simulated and the simulated noise-voltage exceeding the IC-model threshold-values is able to predict measurement failures [1].
Scroll Up
MENU