Mayank received his Ph. D. in Electrical Engineering (2010) from Indian Institute of Technology Bombay, Mumbai, India, B.E. in Electronics and Communication (2006), from Rajiv Gandhi Technical University, Bhopal.
He had held visiting positions in Inﬁneon Technologies, Munich, Germany from April 2008 to October 2008 and again in May 2010 to July 2010. He worked for Inﬁneon Technologies, East Fishkill, NY, USA; IBM Microelectronics, Burlington, VT, USA; Intel Mobile Communications, Hopewell Junction, NY, USA; and Intel Corp., Mobile and Communications Group, Munich, Germany between 2010 and 2013. He joined Indian Institute of Science as a faculty member in year 2013 where he is currently working as an Associate Professor.
VLSI – Nanoelectronics, solid state physics, semiconductor device design, modeling and characterisation, power semiconductors. Shrivastava’s current research deals with experimentation, design and modeling of beyond CMOS devices using Graphene and TMDCs, wide bandgap material-based power semiconductor devices and ESD reliability in advanced and beyond CMOS nodes.